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The PDTB143XQAZ is a PNP Resistor-Equipped Transistor (RET) from the PDTB113Z/123Y/143XQA series, manufactured by Nexperia USA Inc. It integrates an NPN transistor with built-in bias resistors in a DFN1010D-3 (SOT1215) leadless ultra-small SMD plastic package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -500 mA. The device features a base resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 10 kΩ, with a ±10% tolerance on the resistor ratio. It offers a DC current gain (hFE) of at least 70 at -50 mA and -5 V, and a transition frequency (fT) of 150 MHz.
Verify the specific ordering suffix 'QAZ' against the official Nexperia datasheet for the PDTB143XQA series to confirm packaging details and availability. Ensure the procurement documentation references the correct product data sheet revision. Confirm that the received components match the marking codes specified in the manufacturer's documentation for this part number.
Select the PDTB143XQAZ when a PNP RET with a 4.7 kΩ base resistor and 10 kΩ emitter-base resistor is required. This part serves as a cost-saving alternative to discrete BC807/BC817 series transistors in digital switching applications. Consider the DFN1010D-3 package dimensions and thermal characteristics when designing the PCB footprint.
The PDTB143XQAZ belongs to the PDTB113Z/123Y/143XQA family of 50 V, 500 mA PNP resistor-equipped transistors. These devices are designed to replace standard bipolar junction transistors in digital circuits by integrating necessary biasing resistors directly into the package, thereby saving board space and assembly time.
The NPN complement for the PDTB143XQA series is the PDTD143XQA. Designers replacing discrete BC807 or BC817 transistors should verify that the integrated resistor values and ratios of the PDTB143XQAZ meet the specific circuit requirements.