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The PDTB143XTR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in a TO-236AB (SOT23) surface-mount package. It features built-in bias resistors: R1 (input) is 4.7 kΩ and R2 (base-emitter) is 10 kΩ. The device supports a maximum collector current of 500 mA and a collector-emitter voltage of -50 V. Key electrical characteristics include a DC current gain (hFE) of at least 70 at 50 mA, a transition frequency of 140 MHz, and a total power dissipation of 320 mW at 25 °C. It is qualified to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix 'XTR' against the manufacturer's official documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the part status remains active before finalizing procurement plans. Cross-reference the marking code '*4Y' with production batches to confirm authenticity and traceability during quality assurance checks.
Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. The 4.7 kΩ input resistor and 10 kΩ base-emitter resistor provide a specific bias ratio suitable for standard logic interface levels. Consider the thermal resistance values if operating near the maximum junction temperature limits in enclosed environments.
This device belongs to the PDTB1xxxT series of PNP resistor-equipped transistors. It serves as the PNP complement to the PDTA143XT NPN RET. Other variants in the family include PDTB143ET and PDTB114ET, which differ primarily in their internal resistor values. All share the same SOT23/TO-236AB package and core transistor characteristics.
Direct functional substitutes within the same package and specification include PDTB143ET. For NPN polarity requirements, the PDTA143XT is the complementary counterpart. Verify that any replacement maintains the required AEC-Q101 qualification if used in automotive contexts.