SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTB143XTVL is a PNP Resistor-Equipped Transistor (RET) from the PDTB1xxxT series, manufactured by Nexperia. It integrates a single PNP transistor with built-in bias resistors in a SOT23 (TO-236AB) surface-mounted plastic package. The device supports a maximum collector-emitter voltage of -50 V and an output current capability of -500 mA. Key electrical parameters include a typical DC current gain (hFE) of 70 at IC = -50 mA, a total power dissipation of 320 mW at 25 °C, and a junction temperature range up to 175 °C. The internal resistor configuration consists of R1 (input) at 4.7 kΩ and R2 (base-emitter) at 10 kΩ, with a resistor ratio tolerance of ±10%.
Verify the specific ordering suffix 'VL' against official Nexperia documentation to confirm tape-and-reel packaging details and manufacturing site codes. Ensure compatibility with standard SOT23 footprints during PCB layout. Confirm that the AEC-Q101 qualification meets specific automotive reliability requirements for the target application environment.
Select this component when a compact PNP switching solution with integrated base biasing is required. The 4.7 kΩ input resistor suits moderate drive currents, while the 10 kΩ base-emitter resistor aids in ensuring reliable turn-off. Consider the 175 °C junction temperature rating for high-thermal environments where standard 150 °C devices may be insufficient.
This part belongs to the PDTB1xxxT family of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PDTA143XT. The series offers various resistor combinations within the same SOT23 footprint, allowing designers to maintain board space efficiency while adjusting biasing characteristics for different logic levels and load conditions.
PDTA143XT is the NPN complement within the same series. For direct PNP replacements, verify equivalent resistor values (R1=4.7kΩ, R2=10kΩ) and voltage/current ratings in competitor RET families.