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The PDTB143XU is a PNP Resistor-Equipped Transistor (RET) housed in a SOT323 (SC-70) surface-mounted package. It features an integrated bias resistor network with R1 at 4.7 kΩ and R2 at 10 kΩ, providing a typical ratio of 2.13. The device supports a collector-emitter voltage of -50 V and an output current capability of -500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at -50 mA, a transition frequency (fT) of 140 MHz, and a maximum junction temperature of 175 °C. It is qualified to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix against the manufacturer's official database to ensure correct resistor values and package configuration. Confirm that the requested revision matches the latest product data sheet version. Check for any regional compliance requirements or specific marking codes associated with the manufacturing site code placeholder.
Select this component when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. Ensure the input voltage limits are respected, as they vary by series variant. Consider the thermal resistance characteristics if operating near the maximum power dissipation limits on standard FR4 PCBs.
This part belongs to the PDTB1xxxU series of PNP Resistor-Equipped Transistors from Nexperia. It serves as a cost-saving alternative to discrete BC807 or BC817 series transistors in digital switching applications. The NPN complement for this device is the PDTD143XU.
Public confirmed substitute: PDTD143XU (NPN complement).
For the PDTB143XU, the input bias resistor (R1) is 4.7 kΩ and the base-emitter bias resistor (R2) is 10 kΩ.
Yes, the PDTB143XU is qualified according to the Automotive Electronics Council (AEC) standard Q101.
The maximum junction temperature (Tj) for the PDTB143XU is 175 °C.