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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT883
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：SOT-883
Download product information
Overview
The PDTC114EM,315 is an NPN Resistor-Equipped Transistor (RET) housed in a DFN1006-3 (SOT883) surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ, to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current (IO) capability of 100 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The device features a DC current gain (hFE) minimum of 30 at IC = 5 mA and VCE = 5 V. Operating temperatures range from -65 °C to +150 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Built-in bias resistors reduce component count
- Ultra-small leadless plastic package
Applications
- Digital applications in automotive segments
- Control of IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure that the requested quantity aligns with standard factory packing quantities to avoid partial reel handling fees. Confirm RoHS compliance status through the most recent product data sheet revision before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN digital transistor solution is required for space-constrained designs. The integrated 10 kΩ input and emitter-base resistors eliminate external components typically needed for biasing. Verify that the 50 V collector-emitter voltage rating meets the system requirements and that the SOT883 footprint matches the PCB layout constraints.
Part Context
This part belongs to Nexperia's family of NPN resistor-equipped transistors designed for digital switching applications. It serves as a cost-saving alternative to discrete transistor and resistor combinations. The device is specifically engineered to reduce pick-and-place costs and simplify assembly processes in high-volume manufacturing environments.
Replacement Considerations
PDTC114TS
FAQ
What are the values of the built-in resistors?
The PDTC114EM includes two built-in resistors: R1 (input/base) is nominally 10 kΩ, and R2 (emitter/base) is also nominally 10 kΩ.
Is this component suitable for automotive applications?
Yes, the PDTC114EM is qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.
What is the maximum power dissipation?
The total power dissipation (Ptot) is rated at 250 mW when the ambient temperature is 25 °C.
