PDTC114EMB,315

$0.03

Description：TRANS PREBIAS
Series：*

SKU:43771d02aab5 Category: Single, Pre-Biased Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
Resistors Included：-
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Resistor - Base (R1)：-
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
Frequency - Transition：-
Power - Max：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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PDTC114EMB,315

Overview

The PDTC114EMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a leadless DFN1006B-3 (SOT883B) package measuring 1.0 x 0.6 x 0.37 mm. The device features a collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA. The internal input resistor R1 is typically 10 kΩ, with a ratio of R2 to R1 at 1. Total power dissipation is rated at 250 mW. Operating junction temperature ranges from -65 °C to +150 °C. This component is AEC-Q101 qualified for automotive applications.

Feature Summary

Integrates bias resistors to reduce component count and simplify circuit design
Leadless ultra-small SMD plastic package with low profile height
Qualified to AEC-Q101 standard for automotive reliability

Applications

Low-current peripheral driver
Control of IC inputs
Mobile applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this part when space constraints require a leadless package like DFN1006B-3. Ensure the 10 kΩ input resistance matches the driving source requirements. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Confirm thermal management capabilities align with the 250 mW power dissipation limit under expected operating conditions.

Part Context

This component belongs to the PDTC114 series of NPN resistor-equipped transistors. It serves as the complement to the PDTA114EMB PNP variant. The product line focuses on integrating discrete transistor functions with passive biasing elements to minimize board space and assembly complexity in portable and automotive electronics.