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The PDTC114EQB-Q is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) from Nexperia. It integrates bias resistors R1 and R2, both nominally 10 kΩ, within an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package featuring side-wettable flanks. The device measures 1.1 x 1.0 x 0.48 mm with a maximum height of 0.5 mm. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current capability of 100 mA, and a typical transition frequency (fT) of 230 MHz at IC = 10 mA. It operates within a junction temperature range up to 150 °C and is qualified according to AEC-Q101 for automotive applications.
Verify the specific part number PDTC114EQB-Q against the official Nexperia datasheet to confirm resistor values and package type. Ensure compatibility with AEC-Q101 requirements if used in automotive designs. Check the most recent product data sheet for any updates to specifications or marking codes before finalizing procurement.
Select this RET when space constraints require a low-profile solution with integrated biasing. The 10 kΩ internal resistors are suitable for standard digital logic interfacing. Consider the DFN1110D-3 package for high-density PCB layouts requiring AOI-compatible solder joints. Verify thermal dissipation capabilities based on the specific PCB copper area and ambient temperature conditions.
This component belongs to the PDTC143/114/124/144EQB-Q series, which shares the same DFN1110D-3 package and general characteristics but varies in internal resistor values. The PNP complement for this NPN device is PDTA114EQB-Q. All members of this series are designed for cost-effective integration in digital circuits requiring minimal external components.
Direct substitutes within the same series include PDTC143EQB-Q, PDTC124EQB-Q, and PDTC144EQB-Q, differing only in resistor values. The PNP equivalent is PDTA114EQB-Q. Cross-brand replacements must match the 50 V rating, 100 mA current, and DFN1110D-3 package dimensions.