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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：500 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The PDTC114ES,126 is an NPN resistor-equipped transistor (RET) from NXP Semiconductors, designed for general-purpose switching and amplification. It integrates a single NPN bipolar junction transistor with two built-in bias resistors in a compact surface-mounted device package. This integration simplifies circuit design by reducing component count and associated pick-and-place costs. The device features a fixed internal resistance configuration suitable for interface circuits and driver applications. It operates within standard temperature ranges defined for automotive-grade components, ensuring reliability in various electronic systems.
Feature Summary
- Integrated dual-bias resistor network eliminates external components
- Simplified PCB layout through reduced part count
- Automotive-grade qualification for enhanced reliability
Applications
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver applications
Procurement Notes
Verify the specific suffix '126' against official NXP documentation to confirm tape-and-reel packaging specifications. Ensure the component meets the required AEC-Q101 grade standards for the intended automotive application environment. Cross-reference the exact marking code on the device body with the manufacturer's datasheet to prevent counterfeit substitution.
Selection Notes
Select this RET when space constraints or assembly cost reduction are critical factors. Compare the integrated resistor values against discrete alternatives to ensure proper base drive current requirements are met. Verify that the NPN configuration aligns with the logic level and voltage thresholds of the controlling microcontroller or signal source.
Part Context
This component belongs to the PDTC series of resistor-equipped transistors, which consolidate multiple discrete elements into single packages. It serves as a drop-in replacement for traditional discrete BJT and resistor combinations, streamlining the bill of materials for consumer electronics and automotive control modules requiring efficient signal conditioning.
Replacement Considerations
Direct substitutes include other NXP PDTC series variants with matching resistor ratios. Check pinout compatibility with SOT23-3 or similar small outline packages before substituting with competitors' RET devices.
