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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC114ET/DG/B2,21 is an NPN Resistor-Equipped Transistor (RET) from the Nexperia PDTC114E series, housed in a SOT23 plastic surface-mounted package. It integrates bias resistors with R1 = 10 kΩ and R2 = 10 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current capability of 100 mA, and total power dissipation of 250 mW at 25°C ambient temperature. The device features a DC current gain (hFE) minimum of 30 at IC = 5 mA and a transition frequency (fT) typical value of 230 MHz.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Qualified for automotive applications according to AEC-Q101 standards.
- Provides cost-saving alternative for BC847/857 series in digital applications.
Applications
- Digital applications in automotive and industrial segments
- Control of IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure compatibility with reflow soldering processes as specified in the datasheet. Confirm RoHS compliance status through the latest product data sheet revision before finalizing procurement specifications.
Selection Notes
Select this component when a compact NPN transistor with integrated base and pull-down resistors is required. The SOT23 package offers a small footprint suitable for space-constrained designs. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the application requirements. Consider the thermal resistance characteristics for heat dissipation planning.
Part Context
This part belongs to the Nexperia PDTC114E series of NPN resistor-equipped transistors. The series includes variants in different packages such as SOT416, SOT883, and SOT323. The PDTC114ET specifically utilizes the SOT23 package configuration. The PNP complement for this device is the PDTA114ET.
Replacement Considerations
Direct substitutes within the same family include other PDTC114E variants in different packages if form factor allows. For pin-compatible replacements, verify equivalent electrical characteristics such as VCEO, IO, and resistor values. Check for AEC-Q101 qualification if automotive usage is required.
