SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTC114ET/DG/B4,21 is an NPN Resistor-Equipped Transistor (RET) from the PDTC114E series, housed in a SOT23 plastic surface-mounted package. It integrates two bias resistors with nominal values of R1 = 10 kΩ and R2 = 10 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current capability of 100 mA, and a total power dissipation of 250 mW at 25 °C ambient temperature. The device features a transition frequency (fT) of 230 MHz and a DC current gain (hFE) minimum of 30 at IC = 5 mA.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and marking code. Ensure compatibility with reflow soldering processes as specified in the datasheet. Confirm that the requested part number matches the exact electrical specifications required for the target application design.
Select this component when a compact NPN solution with integrated base and pull-down resistors is required. The SOT23 package offers a small footprint suitable for space-constrained designs. Verify that the 50 V voltage rating and 100 mA current limit meet the system requirements before finalizing the bill of materials.
This part belongs to the Nexperia PDTC114E family of NPN resistor-equipped transistors. The 'ET' designation specifically identifies the SOT23 package variant. Other family members include PDTC114EE (SOT416), PDTC114EM (SOT883), and PDTC114EU (SOT323), all sharing similar electrical characteristics but differing in physical dimensions.
The PDTA114ET is the PNP complement within the same series. For direct replacement, verify that the substitute part shares the same SOT23 package and identical resistor ratios (R1/R2 = 1.0). Cross-reference with other manufacturers' RET equivalents only if pinout and electrical limits are confirmed identical.