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The PDTC114ET-Q is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It integrates bias resistors R1 and R2, both specified at 10 kΩ with a ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. Transition frequency reaches 230 MHz, and DC current gain is 30 minimum at 5 mA.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the product data sheet version matches the required revision history for your design implementation. Ensure compliance with the stated automotive qualification standards if deploying in vehicle systems.
Select this component when a compact NPN switching solution with integrated base and emitter resistors is required. The 10 kΩ resistor values provide standard biasing for logic-level control. Verify that the 50 V collector-emitter rating meets the maximum voltage stress of the target application circuit.
This part belongs to the PDTC114 family of NPN resistor-equipped transistors. The PNP complement is PDTA114ET-Q. The 'Q' suffix indicates AEC-Q101 qualification for automotive use. The 'ET' suffix denotes the SOT23 plastic surface-mounted package variant.
The PDTA114ET-Q serves as the PNP complement within the same family. For direct functional substitution in complementary designs, verify pinout compatibility and ensure the PNP polarity aligns with the circuit requirements.