PDTC114ET-QR

PDTC114ET-QR

$0.14
  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-

SKU:04749052671a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:230 MHz
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTC114ET-QR

Overview

The PDTC114ET-Q is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It integrates bias resistors R1 and R2, both specified at 10 kΩ with a ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. Transition frequency reaches 230 MHz, and DC current gain is 30 minimum at 5 mA.

Feature Summary

  • Qualified according to AEC-Q101 for automotive applications
  • Built-in bias resistors simplify circuit design
  • Reduces component count and pick-and-place costs

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC847-Q series in digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the product data sheet version matches the required revision history for your design implementation. Ensure compliance with the stated automotive qualification standards if deploying in vehicle systems.

Selection Notes

Select this component when a compact NPN switching solution with integrated base and emitter resistors is required. The 10 kΩ resistor values provide standard biasing for logic-level control. Verify that the 50 V collector-emitter rating meets the maximum voltage stress of the target application circuit.

Part Context

This part belongs to the PDTC114 family of NPN resistor-equipped transistors. The PNP complement is PDTA114ET-Q. The 'Q' suffix indicates AEC-Q101 qualification for automotive use. The 'ET' suffix denotes the SOT23 plastic surface-mounted package variant.

Replacement Considerations

The PDTA114ET-Q serves as the PNP complement within the same family. For direct functional substitution in complementary designs, verify pinout compatibility and ensure the PNP polarity aligns with the circuit requirements.

PDTC114ET-QRPDTC114ET-QR
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