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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC114ET is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in a small SOT23 surface-mounted device plastic package. It integrates bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage of 50 V and an output current capability of 100 mA. Internal resistor values are specified as R1 = 10 kΩ and R2 = 10 kΩ. The PNP complement for this component is the PDTA114ET.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design
- Reduces overall component count on the printed-circuit board
- Provides 100 mA output current capability
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC847 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify that the specific part number matches the required electrical specifications before integration into designs. Confirm the package type corresponds to the intended PCB footprint. Ensure the product status aligns with the project timeline, noting that this document represents production data. Check for any recent revision history updates that may affect compatibility or availability.
Selection Notes
Select this component when a compact NPN transistor solution with integrated biasing is required for space-constrained designs. Consider the 50 V collector-emitter voltage rating and 100 mA current limit against the application requirements. Evaluate the SOT23 package dimensions for mechanical fit. Compare performance characteristics against standard discrete transistors to assess cost and assembly efficiency benefits.
Part Context
This component belongs to the NPN Resistor-Equipped Transistor family from Nexperia. It serves as the NPN counterpart to the PDTA114ET PNP RET. The device is designed for general-purpose switching and logic interface applications where simplified biasing networks are advantageous. It utilizes the SOT23 package format common in modern surface-mount electronics manufacturing.
Replacement Considerations
The PDTA114ET is the documented PNP complement within the same product family. For direct functional replacement in complementary circuits, verify pinout compatibility and electrical ratings. No other substitute part numbers are explicitly confirmed in the provided documentation.
