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The PDTC114EU-Q is an NPN Resistor-Equipped Transistor (RET) housed in a SOT323 (SC-70) surface-mount package. It integrates bias resistors R1 and R2, both nominally 10 kΩ, to simplify circuit design. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 30 at IC = 5 mA, a collector-emitter saturation voltage of 150 mV max at IC = 10 mA, and a transition frequency of 230 MHz typical. Total power dissipation is rated at 200 mW at 25 °C ambient temperature.
Verify the specific ordering suffix matches the required packaging format, such as cut tape or reel quantities, when sourcing from distributors. Confirm that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements before finalizing procurement decisions.
Select this component when a compact NPN switching solution with integrated base and emitter resistors is required. Ensure the 10 kΩ resistor values meet your input drive logic levels. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage in your specific circuit application.
This part belongs to Nexperia’s PDTC114 series of NPN resistor-equipped transistors. The 'Q' suffix indicates automotive qualification under AEC-Q101 standards. It serves as a cost-saving alternative to discrete transistor and resistor combinations in digital switching circuits.
Check pinout compatibility with SOT323 packages. Verify equivalent resistor values (R1/R2) and hFE ranges if substituting with other RET models.