PDTC114TE,115

Overview

The PDTC114TE,115 is an NPN Resistor-Equipped Transistor (RET) housed in the SOT416 (SC-75) surface-mounted package. It integrates a single bias resistor R1 of 10 kΩ with the emitter left open. Key electrical parameters include a collector-emitter voltage rating of 50 V and a maximum output current capability of 100 mA. The device features a DC current gain (hFE) of at least 200 at a collector current of 1 mA. Total power dissipation is limited to 150 mW at an ambient temperature of 25 °C, with a thermal resistance from junction to ambient of 833 K/W.

Feature Summary

• Integrates a built-in 10 kΩ input bias resistor to simplify circuit design
• Reduces component count and board space requirements
• Provides cost-saving alternative for standard discrete transistor applications

Applications

• Digital logic applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability records consistent with the original equipment manufacturer's standards for this semiconductor component.

Selection Notes

Select the PDTC114TE variant specifically when the SC-75 (SOT416) footprint is required by the PCB layout. This model serves as the NPN complement to the PDTA114TE PNP device. Verify that the 10 kΩ internal bias resistor aligns with the base drive requirements of the target application circuit.

Part Context

This component belongs to the PDTC114T series of NPN Resistor-Equipped Transistors. The series includes multiple package options such as SOT23, SOT323, and SOT54. The PDTC114TE specifically utilizes the SOT416 package, which is distinct from other variants like the PDTC114TU or PDTC114TT found within the same product family.

Replacement Considerations

PDTC114TK (SOT346), PDTC114TM (SOT883), PDTC114TS (SOT54), PDTC114TT (SOT23), PDTC114TU (SOT323)