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The PDTC114TM,315 is an NPN Resistor-Equipped Transistor (RET) from the PDTC114T series, manufactured by Nexperia USA Inc. It features a built-in bias resistor R1 of 10 kΩ with a range of 7 to 13 kΩ, while R2 remains open. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW in the SOT883 package. Key electrical characteristics include a DC current gain (hFE) of at least 200 at IC = 1 mA and VCE = 5 V, and a collector-emitter saturation voltage (VCEsat) of no more than 150 mV at IC = 10 mA and IB = 0.5 mA.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into production workflows.
Select this component when a compact NPN transistor solution with integrated base biasing is required. The SOT883 package offers a small footprint suitable for space-constrained designs. Ensure the 10 kΩ internal resistance aligns with the target drive current and input impedance specifications.
This part belongs to the PDTC114T family of NPN resistor-equipped transistors. Variants within this series utilize different packages such as SOT23, SOT323, and SOT346, but share identical electrical characteristics. The TM suffix specifically denotes the SOT883 leadless ultra-small plastic package configuration.
Direct functional equivalents within the same series include PDTC114TT (SOT23) or PDTC114TU (SOT323), provided the PCB layout accommodates the respective package differences. Verify pinout compatibility before substitution.