PDTC114TMB,315

$0.03

Description：TRANS PREBIAS
Series：*

SKU:267b405b0132 Category: Single, Pre-Biased Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
Resistors Included：-
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Resistor - Base (R1)：-
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
Frequency - Transition：-
Power - Max：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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PDTC114TMB,315

Overview

The PDTC114TMB,315 is an NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package with dimensions of 1.0 x 0.6 x 0.37 mm. It features a built-in input bias resistor R1 of 10 kΩ and an open base configuration for R2. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Key electrical characteristics include a DC current gain (hFE) of 200 at IC=1mA and VCE=5V, a saturation voltage (VCEsat) of 150 mV at IC=10mA, and a transition frequency (fT) of 230 MHz. Total power dissipation is rated at 250 mW.

Feature Summary

AEC-Q101 qualified for automotive applications
Leadless ultra-small SMD plastic package
Low package height of 0.37 mm
Built-in bias resistors simplify circuit design

Applications

Low-current peripheral driver
Control of IC inputs
Mobile applications
Replaces general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging details such as reel quantity or tape specifications. Confirm RoHS compliance status and REACH registration requirements prior to integration. Ensure the component matches the required AEC-Q101 qualification level if used in automotive contexts. Cross-reference marking codes to validate authenticity upon receipt.

Selection Notes

Select this component when space constraints require a leadless DFN1006B-3 footprint. Choose this part for circuits requiring a single NPN transistor with a fixed 10 kΩ base resistor. Verify that the 50 V collector-emitter voltage rating meets the system's maximum operating conditions. Consider the 250 mW power dissipation limit relative to the thermal resistance of the PCB layout.

Part Context

This component belongs to the PDTC114 series of NPN resistor-equipped transistors manufactured by Nexperia. It serves as the complement to the PDTA114TMB PNP variant. The device integrates discrete transistor functionality with biasing resistors into a compact surface-mount package designed for high-density electronic assemblies.