PDTC114TT,215

Overview

The PDTC114TT,215 is an NPN Resistor-Equipped Transistor (RET) from the PDTC114T series, manufactured by Nexperia USA Inc. It integrates a single bias resistor (R1) with a nominal value of 10 kΩ, while R2 remains open. The device is housed in a SOT23 surface-mount package and supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) of at least 200 at IC = 1 mA and VCE = 5 V, and a collector-emitter saturation voltage (VCEsat) of no more than 150 mV at IC = 10 mA and IB = 0.5 mA.

Feature Summary

• Integrates a built-in input bias resistor to simplify circuit design and reduce component count.
• Provides a cost-saving alternative for general-purpose transistors in digital applications.
• Features low package height to facilitate automated pick-and-place manufacturing processes.

Applications

• Controlling IC inputs
• Switching loads
• Digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the packing method and quantity. The suffix indicates the tape and reel configuration used for surface-mount assembly. Ensure compatibility with standard reflow soldering profiles as specified in the thermal characteristics section of the datasheet.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The 10 kΩ internal resistor simplifies drive circuits compared to discrete transistor setups. Verify that the 50 V voltage rating and 100 mA current capability meet the specific load requirements of the target application design.

Part Context

This part belongs to the PDTC114T family of NPN resistor-equipped transistors. The series includes variants with different packages such as SOT323, SOT883, and SOT54, as well as PNP complements like the PDTA114TT. All members share the same core electrical specifications but differ in physical footprint and marking codes.

Replacement Considerations

Direct functional substitutes within the same series include PDTA114TT (PNP complement). Other RETs with similar 50 V ratings and 100 mA capabilities may be considered if pinout and resistance values match the existing design constraints.

FAQ

What is the function of the internal resistors in the PDTC114TT?

The PDTC114TT contains one built-in bias resistor (R1) connected to the base with a nominal value of 10 kΩ. The second resistor position (R2) is left open and not implemented.

What is the maximum power dissipation for the SOT23 package?

The total power dissipation (Ptot) for the PDTC114TT in the SOT23 package is 250 mW when the ambient temperature is 25 °C or lower.

How does the pin configuration work for the SOT23 package?

In the SOT23 package, Pin 1 is the input (base), Pin 2 is the ground (emitter), and Pin 3 is the output (collector).