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The PDTC114TT,235 is an NPN Resistor-Equipped Transistor (RET) from the PDTC114T series, manufactured by Nexperia USA Inc. It integrates a single bias resistor (R1) with a nominal value of 10 kΩ, while R2 remains open. The device is housed in a SOT23 surface-mount package and supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) of 200 at IC = 1 mA and VCE = 5 V, a collector-emitter saturation voltage (VCEsat) of 150 mV max at IC = 10 mA, and a collector-base cut-off current (ICBO) of 100 nA max.
Verify the specific ordering suffix to confirm the packing method and quantity. The -235 suffix indicates a tape and reel configuration with a packing quantity of 3000 units. Confirm the RoHS status and manufacturing origin details via the official datasheet or distributor documentation before finalizing procurement orders.
Select this component when a compact NPN switching solution with integrated base biasing is required. The 10 kΩ internal resistor simplifies drive circuits compared to discrete transistor setups. Ensure the application current does not exceed 100 mA and that the 50 V voltage rating accommodates the system's peak collector-emitter voltage requirements.
This part belongs to the PDTC114T family of NPN resistor-equipped transistors. The PNP complement for this series is the PDTA114TT. Other variants in the family utilize different packages such as SOT323, SOT883, and SOT54, offering flexibility for various PCB layout constraints while maintaining identical electrical performance specifications.
The PDTA114TT serves as the PNP complement within the same product family. For direct replacement in existing designs, verify that the substitute maintains the same pinout configuration and thermal resistance characteristics to ensure compatibility with the original footprint and heat dissipation requirements.