PDTC114TT,235

PDTC114TT,235

$0.13
  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-

SKU:1c815fd6c25f Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTC114TT,235

Overview

The PDTC114TT,235 is an NPN Resistor-Equipped Transistor (RET) from the PDTC114T series, manufactured by Nexperia USA Inc. It integrates a single bias resistor (R1) with a nominal value of 10 kΩ, while R2 remains open. The device is housed in a SOT23 surface-mount package and supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) of 200 at IC = 1 mA and VCE = 5 V, a collector-emitter saturation voltage (VCEsat) of 150 mV max at IC = 10 mA, and a collector-base cut-off current (ICBO) of 100 nA max.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count
  • Reduces pick and place costs for automated assembly
  • Cost-saving alternative for general-purpose transistors in digital applications

Applications

  • Digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix to confirm the packing method and quantity. The -235 suffix indicates a tape and reel configuration with a packing quantity of 3000 units. Confirm the RoHS status and manufacturing origin details via the official datasheet or distributor documentation before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The 10 kΩ internal resistor simplifies drive circuits compared to discrete transistor setups. Ensure the application current does not exceed 100 mA and that the 50 V voltage rating accommodates the system's peak collector-emitter voltage requirements.

Part Context

This part belongs to the PDTC114T family of NPN resistor-equipped transistors. The PNP complement for this series is the PDTA114TT. Other variants in the family utilize different packages such as SOT323, SOT883, and SOT54, offering flexibility for various PCB layout constraints while maintaining identical electrical performance specifications.

Replacement Considerations

The PDTA114TT serves as the PNP complement within the same product family. For direct replacement in existing designs, verify that the substitute maintains the same pinout configuration and thermal resistance characteristics to ensure compatibility with the original footprint and heat dissipation requirements.

PDTC114TT,235PDTC114TT,235
$0.13
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