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The PDTC114YM,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single transistor with built-in bias resistors in a DFN1006-3 (SOT883) surface-mount package. The device features a collector-emitter voltage of 50 V and a maximum output current of 100 mA. Internal resistors include R1 at 10 kΩ and R2 at 47 kΩ. Key electrical characteristics include a DC current gain of 100 at 5 mA, a transition frequency of 230 MHz, and a total power dissipation of 250 mW. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix to confirm packaging configuration, as variations exist within the product family. Confirm RoHS compliance status and lead times directly with authorized distributors or Nexperia sales offices prior to procurement. Ensure the selected variant matches the required marking code and package dimensions for the intended PCB footprint.
Select this component when a compact NPN switching solution with integrated base and emitter resistors is required. The 10 kΩ input resistor and 47 kΩ emitter resistor provide a fixed bias ratio suitable for standard logic interfacing. Consider the SOT883 package size constraints and thermal dissipation requirements relative to the application's ambient temperature conditions.
This part belongs to the Nexperia PDTC114Y series of NPN resistor-equipped transistors. It serves as the complement to the PDTA114YM PNP variant. The series is designed to replace discrete resistor networks in digital switching circuits, offering a space-efficient alternative to traditional BJT configurations requiring external biasing components.
PDTC114TM,315: Different internal resistor configuration (R2 open).
The device contains a base bias resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ.
Yes, the PDTC114YM is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The maximum collector-emitter voltage (VCEO) is 50 V.