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Product Detailed Parameters
- Description：TRANS PREBIAS
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTC114YQAZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package. It features built-in bias resistors: R1 is 10 kΩ and R2 is 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 5 mA, a transition frequency (fT) typical value of 230 MHz, and a collector-emitter saturation voltage of 100 mV max at 5 mA. Total power dissipation reaches 440 mW on a standard FR4 PCB, with a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates two bias resistors to reduce component count and simplify circuit design.
- Qualified according to AEC-Q101 standards for automotive applications.
- Features a low profile package height of 0.37 mm suitable for space-constrained designs.
- Includes visible and solderable side pads to facilitate Automatic Optical Inspection.
Applications
- Digital logic applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific suffix 'Z' against the manufacturer's latest documentation to confirm packaging details such as reel or cut tape configuration. Ensure the ordering code matches the required bias resistor values for the PDTC114YQA variant. Confirm RoHS compliance status through official Nexperia channels prior to final procurement decisions.
Selection Notes
Select this component when a compact NPN switching solution with integrated base biasing is required. The 10 kΩ input resistor and 47 kΩ pull-down resistor define the specific drive characteristics. Compare the 100 mA current capability and 50 V voltage rating against application requirements to ensure adequate headroom for load switching operations.
Part Context
This part belongs to the PDTC143X/123J/143Z/114YQA series of 50 V, 100 mA NPN resistor-equipped transistors. All members share the same DFN1010D-3 package and general electrical limits but differ in internal bias resistor values. The PDTC114YQA specifically utilizes a 10 kΩ R1 and 47 kΩ R2 configuration.
Replacement Considerations
The PDTA114YQA serves as the PNP complement within the same series. Direct substitution requires verifying polarity compatibility and ensuring the circuit topology supports NPN operation versus PNP operation.
FAQ
What are the specific values of the built-in bias resistors?
For the PDTC114YQA, the input bias resistor (R1) is 10 kΩ and the pull-down resistor (R2) is 47 kΩ.
Is this component qualified for automotive use?
Yes, the product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
What is the maximum total power dissipation?
The total power dissipation is up to 440 mW when mounted on a standard FR4 PCB footprint.
