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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230 MHz
- Power - Max：340 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTC114YQB-Q is an NPN resistor-equipped transistor from the QB-Q series, housed in a DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It features a collector-emitter voltage of 50 V and an output current capability of 100 mA. The device integrates a base bias resistor (R1) of 10 kΩ and an emitter bias resistor (R2) of 47 kΩ, resulting in a nominal R2/R1 ratio of 4.7. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 5 mA, a transition frequency (fT) of 230 MHz, and a maximum total power dissipation of 340 mW on a standard FR4 PCB.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q101 standards for reliable operation in automotive environments.
- Ultra-thin 0.5 mm package height designed to facilitate Automatic Optical Inspection (AOI) of solder joints.
- Integrated bias resistors simplify circuit design by reducing component count and pick-and-place costs.
Applications
- Digital logic applications requiring signal level shifting or buffering
- Direct control of integrated circuit inputs
- Switching low-power loads in automated systems
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status. Confirm the marking code 'E2' matches the physical component to ensure authenticity. Check the latest Nexperia datasheet revision for any updates to thermal resistance values or recommended footprint dimensions before finalizing procurement specifications.
Selection Notes
Select this component when an NPN configuration with a high base-to-emitter resistor ratio is required. The 10 kΩ input resistor provides moderate drive capability suitable for standard logic outputs. Ensure the application operates within the 50 V collector-emitter limit and consider the 368 K/W thermal resistance for free-air heat dissipation calculations.
Part Context
This part belongs to the PDTC143X/123J/143Z/114Y/124XQB-Q series, which shares the same SOT8015 package and core transistor structure but varies in internal resistor values. It serves as the NPN counterpart to the PDTA114YQB-Q PNP device. The series replaces older discrete resistor-transistor networks in space-constrained digital designs.
Replacement Considerations
PDTC114YU,115 (SOT-323 package)
FAQ
What is the marking code for the PDTC114YQB-Q?
The marking code for the PDTC114YQB-Q is E2.
How does the package design support manufacturing inspection?
The DFN1110D-3 package features side-wettable flanks, which allows for Automatic Optical Inspection (AOI) of the solder joints to verify connection quality.
What is the typical transition frequency of this device?
The typical transition frequency (fT) is 230 MHz, measured at VCE = 5 V, IC = 10 mA, and f = 100 MHz.
