PDTC114YQBZ

Overview

The PDTC114YQBZ is an NPN resistor-equipped transistor (RET) from the Nexperia PDTC143X/123J/143Z/114Y/124XQB series. It features a built-in bias resistor R1 of 10 kΩ and a bias resistor ratio (R2/R1) of 4.7, with R2 nominally at 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. It is housed in a DFN1110D-3 (SOT8015) leadless surface-mount package measuring 1.1 x 1.0 x 0.48 mm. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at IC = 5 mA and VCE = 5 V, and a transition frequency (fT) typical value of 230 MHz.

Feature Summary

• Integrates internal bias resistors to simplify circuit design and reduce component count.
• Ultra-small DFN1110D-3 package with side-wettable flanks for improved solder joint inspection.
• Low profile construction suitable for space-constrained applications.

Applications

• Digital switching applications
• Cost-effective alternative to BC847 series transistors
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the DFN1110D-3 footprint matches the target PCB layout requirements. Check for any recent product change notifications regarding marking codes or thermal characteristics before finalizing procurement.

Selection Notes

Select this component when a compact NPN switch with integrated base biasing is required. The 10 kΩ input resistor provides a specific drive current characteristic distinct from other variants in the series. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the thermal resistance values align with the expected power dissipation in free air or on the PCB.

Part Context

This part belongs to the Nexperia PDTC143X/123J/143Z/114Y/124XQB family of 50 V, 100 mA NPN resistor-equipped transistors. The 'Y' designation specifically indicates the 10 kΩ / 47 kΩ resistor configuration within this series. The 'QB' suffix denotes the DFN1110D-3 (SOT8015) package variant with side-wettable flanks, distinguishing it from older SOT packages.

Replacement Considerations

PDTC114YT-QR offers similar electrical performance but utilizes a SOT-23 package instead of the DFN1110D-3 form factor. Designers must account for the physical footprint differences and potential changes in thermal resistance when substituting between these package types.

FAQ

What is the nominal value of the internal bias resistor R2?

For the PDTC114YQBZ, the internal bias resistor R2 has a nominal value of 47 kΩ, resulting in a bias resistor ratio (R2/R1) of 4.7 given the 10 kΩ R1.

Does the PDTC114YQBZ have automotive qualification?

No. Unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use and is not qualified according to automotive testing or application requirements.

What is the maximum junction temperature for this device?

The maximum junction temperature (Tj) for the PDTC114YQBZ is 150 °C.