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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The Nexperia PDTC114YT-QVL is an NPN Resistor-Equipped Transistor (RET) housed in a SOT23 surface-mount package. It integrates bias resistors R1 and R2 with nominal values of 10 kΩ and 47 kΩ, respectively. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature. The component operates within an ambient temperature range of -65 °C to +150 °C and features a junction-to-ambient thermal resistance of 500 K/W.
Feature Summary
- Qualified according to AEC-Q101 for automotive applications
- Built-in bias resistors simplify circuit design
- Reduces component count and pick-and-place costs
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC847-Q series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific suffix 'VL' against official Nexperia documentation to confirm packaging details such as reel size or tape width. Standard ordering information lists the base type number PDTC114YT-Q in SOT23 packages. Confirm availability through authorized distributors and ensure compliance with RoHS directives before procurement.
Selection Notes
Select this component when a compact NPN transistor solution with integrated biasing is required for space-constrained designs. The built-in resistors eliminate external components, reducing board area and assembly complexity. Ensure the 50 V collector-emitter voltage rating meets the application's maximum operating conditions and that the 100 mA current capability aligns with load requirements.
Part Context
This part belongs to the PDTC114 family of NPN resistor-equipped transistors from Nexperia. It serves as the NPN complement to the PDTA114YT PNP variant. The product line is designed to replace discrete resistor-transistor networks, offering a standardized solution for digital switching and logic interface applications across various industries.
Replacement Considerations
The PDTA114YT is the documented PNP complement. For direct NPN replacements, verify equivalent RET devices with matching 10 kΩ input resistance and 50 V ratings. Ensure any substitute maintains the SOT23 footprint and AEC-Q101 qualification if automotive usage is intended.
FAQ
What are the nominal values of the built-in resistors?
The internal bias resistor R1 (input) has a nominal value of 10 kΩ, and the ratio R2/R1 is 4.7, corresponding to an R2 value of 47 kΩ.
Is this component suitable for automotive use?
Yes, the PDTC114YT-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) with an open base is 50 V.
