PDTC114YT,215

PDTC114YT,215

$0.10
  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-

SKU:bbd641c736d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTC114YT,215

Overview

The PDTC114YT,215 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mounted package. It integrates bias resistors with R1 = 10 kΩ and R2 = 47 kΩ to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current (IO) of 100 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C. The device features a DC current gain (hFE) of 100 at IC = 5 mA and a transition frequency (fT) of 230 MHz. Limiting values specify a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 6 V.

Feature Summary

  • Integrates built-in bias resistors to reduce component count and simplify circuit design.
  • Provides 100 mA output current capability for digital switching applications.
  • Offers high breakdown voltage suitable for controlling IC inputs and switching loads.

Applications

  • Digital applications in industrial segments
  • Cost-saving alternative for BC847 series in digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the product status aligns with production requirements. Ensure compliance with RoHS directives as specified in the datasheet. Check for any recent Product Change Notifications (PCN) affecting assembly or materials. Validate that the non-automotive qualification meets the application's environmental standards.

Selection Notes

Select this component when a compact NPN transistor with integrated base biasing is required. The SOT23 package is suitable for space-constrained surface-mount designs. Consider the 50 V rating and 100 mA current limit for appropriate load handling. Verify thermal performance against the derating curve if operating above 25 °C ambient temperature.

Part Context

This part belongs to the Nexperia Resistor-Equipped Transistor (RET) family, designed to replace discrete resistor-transistor combinations. The PNP complement is the PDTA114YT. The product data sheet was revised on 25 April 2023, transitioning from a family document to a single-type specification and updating legal texts to reflect the Nexperia brand identity.

Replacement Considerations

The PDTA114YT serves as the PNP complement within the same RET family. For direct pin-compatible substitution in similar circuits, verify the polarity requirements. Other RETs in the SOT23 package may be considered if different resistor ratios are needed, but ensure voltage and current ratings match the original design constraints.

PDTC114YT,215PDTC114YT,215
$0.10
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