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The PDTC114YUF is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a SOT323 (SC-70) surface-mount package. The device features a collector-emitter voltage of 50 V, an output current capability of 100 mA, and a total power dissipation of 200 mW at 25 °C. Internal resistor values include R1 = 10 kΩ and R2 = 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of 100 at 5 mA, a transition frequency of 230 MHz, and a collector-emitter saturation voltage of 100 mV.
Verify the specific ordering suffix 'F' against official Nexperia documentation to confirm packaging details such as reel size or tape specifications. Confirm RoHS compliance status and ensure the selected variant matches the required marking code '%30' for manufacturing site identification before finalizing procurement orders.
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. Ensure the operating ambient temperature remains within the specified range and that the thermal resistance requirements are met on the target PCB footprint. Verify compatibility with logic levels if used for controlling IC inputs.
The PDTC114YU belongs to the NPN Resistor-Equipped Transistor family from Nexperia. It is housed in the SOT323 plastic surface-mounted package. The PNP complement for this device is the PDTA114YU. This product is classified as non-automotive qualified unless explicitly designated with a '-Q' suffix.
The PDTA114YU serves as the PNP complement. For direct functional substitution in similar circuits, verify pinout compatibility and electrical ratings against the original design requirements.
The device includes a base bias resistor (R1) of 10 kΩ and an emitter bias resistor (R2) of 47 kΩ.
The maximum collector-emitter voltage (VCEO) with an open base is 50 V.
The typical transition frequency (fT) is 230 MHz under conditions of VCE = 5 V and IC = 10 mA.