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The PDTC115EEF,115 is an NPN resistor-equipped transistor from the PDTC115E series manufactured by Nexperia. It integrates bias resistors R1 and R2, both typically 100 kΩ, into a single SOT490 (SC-89) surface-mount package. The device supports a collector-emitter voltage of 50 V and a DC output current of 20 mA. Key electrical characteristics include a maximum power dissipation of 250 mW at 25 °C, a thermal resistance of 500 K/W in free air, and a DC current gain (hFE) of at least 80 at 5 mA. The component operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and manufacturing origin. Ensure compliance with RoHS directives and check for any recent product status changes or obsolescence notices on the official NXP website before finalizing procurement plans.
Select this component when a compact NPN solution with integrated biasing is required for low-power switching. The SOT490 package offers a small footprint suitable for space-constrained designs. Verify that the 20 mA DC current rating and 50 V voltage limits align with the specific load requirements of the target application circuit.
This part belongs to the PDTC115E series of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTA115EEF PNP variant. The series provides standardized biasing configurations to streamline the design of digital logic interfaces and signal inversion stages in consumer and industrial electronics.
Direct pin-compatible substitutes within the same series include the PDTA115EEF for PNP applications. Other packages in the PDTC115E family, such as PDTC115ET (SOT23) or PDTC115EU (SOT323), offer identical electrical characteristics but require different footprints.