PDTC115EM,315

Overview

The PDTC115EM,315 is an NPN resistor-equipped transistor from the PDTC115E series manufactured by Nexperia. It integrates two bias resistors within a single SOT883 (SC-101) leadless ultra-small plastic package. The device features a collector-emitter voltage of 50 V and a DC output current of 20 mA. Internal resistances R1 and R2 are both nominally 100 kΩ. Total power dissipation is rated at 250 mW under standard mounting conditions.

Feature Summary

• Built-in bias resistors simplify circuit design
• Reduces component count on printed circuit boards
• Leadless ultra-small plastic package for space-constrained applications

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver

Procurement Notes

Verify the specific ordering suffix to confirm manufacturing origin and reel specifications. Confirm package compatibility with automated pick-and-place equipment. Ensure thermal management aligns with the specified total power dissipation limits for the SOT883 package during operation.

Selection Notes

Select this component when space optimization is critical due to its compact SOT883 footprint. Verify that the required bias resistance values match the internal 100 kΩ configuration. Consider the PNP complement PDTA115EM if complementary logic functionality is needed in the same design.

Part Context

This part belongs to the PDTC115E series of NPN resistor-equipped transistors. It shares electrical characteristics with other variants in the series but differs in physical packaging. The SOT883 package provides a leadless surface-mount solution suitable for high-density assembly processes.

Replacement Considerations

The PDTA115EM serves as the PNP complement within the same series. Other PDTC115E variants offer different packages such as SOT23 or SOT323 while maintaining identical electrical parameters.