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The PDTC115ES,126 is an NPN resistor-equipped transistor from the PDTC115E series manufactured by Nexperia. It integrates bias resistors R1 and R2, both nominally 100 kΩ, within a single SOT54 (TO-92) plastic package. The device supports a maximum collector-emitter voltage of 50 V and a DC output current of 20 mA. Total power dissipation reaches 500 mW at 25 °C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA collector current and a typical input-off voltage of 1.1 V.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm availability and regional manufacturing origin. Confirm that the SOT54 through-hole package aligns with the target PCB footprint requirements. Ensure compliance with RoHS directives if applicable to the assembly process.
Select this component when a compact NPN solution with integrated base biasing is required for low-current switching tasks. The TO-92 package facilitates manual handling or through-hole mounting where surface-mount options are unsuitable. Verify that the 20 mA continuous current rating meets the load requirements of the specific application circuit.
This part belongs to the PDTC115E series, which includes various package options such as SOT23, SOT323, and SOT416. The ES variant specifically denotes the SOT54 (TO-92) leaded package. Complementary PNP versions are available under the PDTA115E designation, maintaining identical internal resistor ratios and electrical specifications.
Direct replacements include other PDTC115E series variants in different packages, such as PDTC115ET (SOT23) or PDTC115EU (SOT323), provided the physical footprint allows. Cross-manufacturer equivalents must match the 100 kΩ/100 kΩ resistor ratio and 50 V / 20 mA ratings.