PDTC115ET,215

Overview

The PDTC115ET,215 is an NPN resistor-equipped transistor (RET) from the PDTC115E series manufactured by Nexperia. It integrates a single NPN transistor with two built-in bias resistors: R1 = 100 kΩ and R2 = 100 kΩ. The device is housed in a SOT23 plastic surface-mounted package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a DC output current (IO) of 20 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The junction temperature maximum is 150 °C.

Feature Summary

• Built-in bias resistors simplify circuit design and reduce component count.
• Reduces pick and place costs compared to discrete transistor configurations.

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver

Procurement Notes

Verify the ordering suffix matches the required package variant. Confirm the manufacturer source directly through official Nexperia channels or authorized distributors. Ensure the product status aligns with current production requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring compact NPN switching with integrated base biasing. The SOT23 package suits standard surface-mount assembly processes. Verify that the 20 mA output current and 50 V voltage ratings meet the specific load requirements of the target application circuit.

Part Context

This part belongs to the PDTC115E series of NPN resistor-equipped transistors. The series includes variants in different packages such as SOT323, SOT883, and TO-92. The ET suffix specifically denotes the SOT23 package configuration within this family.

Replacement Considerations

The PDTA115ET serves as the PNP complement within the same series. Other RETs with different resistor values may replace this unit if circuit parameters allow, provided pin compatibility is maintained.