PDTC115TMB,315

$0.03

Description：TRANS PREBIAS NPN
Series：*

SKU:d6ecfc86a37a Category: Single, Pre-Biased Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
Resistors Included：-
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Resistor - Base (R1)：-
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
Frequency - Transition：-
Power - Max：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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PDTC115TMB,315

Overview

The PDTC115TMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single bias resistor (R1) within a leadless DFN1006B-3 (SOT883B) package measuring 1.0 x 0.6 x 0.37 mm. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA. Key electrical parameters include a typical DC current gain (hFE) of 100 at IC = 1 mA, a transition frequency (fT) of 230 MHz, and a collector-emitter saturation voltage of 150 mV at IC = 5 mA. The built-in input resistor R1 has a nominal value of 100 kΩ with a tolerance range of 70 to 130 kΩ.

Feature Summary

Integrates a built-in bias resistor to reduce component count and simplify circuit design.
AEC-Q101 qualified for automotive applications.
Features a leadless ultra-small SMD plastic package with a low profile height of 0.37 mm.

Applications

Low-current peripheral driver
Control of IC inputs
Mobile applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging configuration and availability status. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Ensure compatibility with standard surface-mount assembly processes for the DFN1006B-3 footprint.

Selection Notes

Select this component when space-constrained designs require an NPN transistor with integrated base biasing. The 100 kΩ internal resistor eliminates external base components. Verify that the 100 mA current rating and 50 V voltage limits align with the target application load requirements.

Part Context

This part belongs to the PDTC115 series of NPN Resistor-Equipped Transistors. It serves as the complement to the PDTA115TMB PNP variant. Both devices utilize the same DFN1006B-3 package and share similar electrical characteristics tailored for digital switching and interface applications.