ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
Download product information
Overview
The PDTC115TU,115 is an NPN resistor-equipped transistor (RET) housed in a SOT323 (SC-70) surface-mounted plastic package. It integrates a single internal bias resistor (R1) with the collector-base open configuration. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 100 mA. The typical input bias resistance (R1) is 100 kΩ, with a specified range from 70 kΩ to 130 kΩ. The device supports a total power dissipation of 200 mW at 25 °C ambient temperature and operates within a junction temperature range up to 150 °C.
Feature Summary
- Integrates a built-in bias resistor to reduce component count and simplify circuit design.
- Provides general-purpose switching and amplification capabilities for circuit drivers.
- Supports inverter and interface circuits through simplified pre-biasing.
Applications
- General-purpose switching
- Amplification
- Circuit drivers
- Inverter circuits
- Interface circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and quantity. Confirm compliance with RoHS and REACH regulations as stated in the product data sheet before finalizing procurement specifications.
Selection Notes
Select this component when a compact NPN solution with integrated base biasing is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the thermal environment allows for adequate power dissipation within the SOT323 package constraints.
Part Context
This part belongs to the PDTC115T series of NPN resistor-equipped transistors manufactured by Nexperia. The series includes various package options such as SOT416, SOT346, SOT883, SOT54, and SOT23, all sharing the same electrical characteristics but differing in physical footprint and mounting style.
Replacement Considerations
PDTC115TE,115
FAQ
What is the value of the internal bias resistor?
The internal bias resistor (R1) has a typical value of 100 kΩ, with a minimum of 70 kΩ and a maximum of 130 kΩ.
Is there an internal emitter resistor in this device?
No, the PDTC115TU features an open collector-base configuration with only the input bias resistor (R1) integrated; R2 is open.
What is the maximum storage temperature?
The maximum storage temperature (Tstg) for the PDTC115TU is +150 °C.
