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The PDTC123EEF,115 is an NPN resistor-equipped transistor from the PDTC123E series manufactured by Nexperia. It integrates a single NPN transistor with built-in bias resistors R1 and R2, both having a typical value of 2.2 kΩ. The device operates in the SOT490 (SC-89) plastic surface-mounted package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a DC output current (IO) of 100 mA, and a total power dissipation of 250 mW at 25 °C ambient temperature. The junction temperature rating reaches 150 °C.
Verify the specific ordering suffix '115' against the manufacturer's official documentation to confirm packaging details and manufacturing origin. Ensure the selected component matches the required SOT490 package dimensions and pin configuration for PCB layout compatibility. Cross-reference the datasheet revision date to confirm technical specifications remain current.
Select this component when a compact NPN solution with fixed 2.2 kΩ bias resistors is required. The SOT490 package offers a small footprint suitable for high-density designs. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with the target application's electrical requirements before finalizing the design.
This part belongs to the PDTC123E series of NPN resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and SOT883. The PDTC123EEF specifically utilizes the SOT490 package, distinguishing it from other series members like the PDTC123ET or PDTC123EU which use different form factors while maintaining identical electrical characteristics.
Direct substitutes within the same series include parts with different package codes but identical electrical specs, such as PDTC123ET or PDTC123EU. Ensure any replacement maintains the SOT490 footprint if board space is constrained. Verify that the PNP complement PDTA123EEF is not required for complementary logic stages.