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Product Detailed Parameters
- Description：PDTC123EM-Q/SOT883/XQFN3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
Download product information
Overview
The PDTC123EM-QYL is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in the DFN1006-3 package (SOT883). It integrates a single PNP transistor with built-in bias resistors: R1 is typically 2.2 kΩ and R2 is typically 2.2 kΩ. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Maximum power dissipation is 250 mW at ambient temperatures up to 70°C, extending to 150°C junction temperature. It is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates PNP transistor with dual bias resistors to simplify circuit design
- AEC-Q101 qualified for automotive reliability requirements
- Ultra-small DFN1006-3 package enables high-density PCB layouts
Applications
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver applications
Procurement Notes
Verify the specific suffix -QYL against official Nexperia documentation to confirm exact tape-and-reel specifications and lot traceability. Ensure the component meets the required AEC-Q101 grade for the target automotive environment. Cross-reference the DFN1006-3 footprint dimensions during PCB layout to ensure compatibility with assembly equipment.
Selection Notes
Select this component when a compact PNP solution with integrated biasing is required for automotive or industrial digital logic interfaces. Compare the 2.2 kΩ resistor values against the driving source impedance to ensure adequate base current. Consider the 250 mW power dissipation limit relative to the expected operating temperature range and thermal management capabilities of the final assembly.
Part Context
This part belongs to the PDTC123E series of PNP resistor-equipped transistors. It serves as a discrete alternative to complex bias networks, reducing component count and pick-and-place costs. The DFN1006-3 package offers a significant size reduction compared to traditional SOT23 packages while maintaining similar electrical performance characteristics for low-power switching tasks.
Replacement Considerations
Direct replacements include other PDTC123 variants in different packages such as PDTC123ET (SOT23) or PDTC123EU (SC-70), provided the board space allows. Verify that substitute parts maintain the same 2.2 kΩ/2.2 kΩ resistor ratio and meet AEC-Q101 qualification if automotive compliance is mandatory.
