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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT883
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：SOT-883
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Overview
The PDTC123EM,315 is an NPN resistor-equipped transistor (RET) from the PDTC123E series manufactured by Nexperia. It integrates a single NPN transistor with two built-in bias resistors, R1 and R2, both specified at 2.2 kΩ. The device is housed in a leadless ultra-small SOT883 (SC-101) plastic package with dimensions of 1.0 x 0.6 x 0.5 mm. Key electrical ratings include a collector-emitter voltage (VCEO) of -50 V, a DC output current (IO) of -100 mA, and a total power dissipation (Ptot) of 250 mW under standard mounting conditions.
Feature Summary
- Integrates an NPN transistor with dual built-in bias resistors to simplify circuit design and reduce component count.
- Utilizes a compact leadless ultra-small SOT883 package for high-density surface-mount applications.
- Designed to reduce pick and place costs through consolidated packaging.
Applications
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and compliance status. Ensure that the SOT883 package variant matches the required footprint for PCB layout. Confirm thermal resistance values relative to the specific FR4 copper strip line conditions used in the target application environment.
Selection Notes
Select this component when space constraints require a leadless ultra-small package like SOT883. The integrated 2.2 kΩ bias resistors eliminate external components, making it suitable for cost-sensitive digital logic interfaces. Verify that the 50 V collector-emitter voltage rating meets the maximum operating voltage requirements of the specific circuit node.
Part Context
The PDTC123EM belongs to the broader PDTC123E series of NPN resistor-equipped transistors. This series includes various package options such as SOT23, SOT323, and SOT416, all sharing the same internal electrical characteristics but differing in physical form factors. The EM suffix specifically denotes the SOT883 package configuration within this product family.
Replacement Considerations
Direct functional substitutes within the same series include PDTC123EE, PDTC123EK, PDTC123ET, and PDTC123EU. Note that these alternatives utilize different packages (SOT416, SOT346, SOT23, SOT323 respectively) and are not pin-compatible or mechanically interchangeable with the SOT883 PDTC123EM without PCB redesign.
FAQ
What are the specific values of the built-in resistors?
Both the input bias resistor (R1) and the emitter bias resistor (R2) are fixed at 2.2 kΩ.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at -50 V.
Which package type does the PDTC123EM use?
It uses the SOT883 package, described as a leadless ultra-small plastic package with three solder lands.
