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The PDTC123EMB,315 is an NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package with dimensions of 1.0 x 0.6 x 0.37 mm. It features built-in bias resistors R1 and R2, both typically 2.2 kΩ at 25 °C, with a ratio range of 0.8 to 1.2. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at ambient temperatures up to 25 °C, with a junction temperature limit of 150 °C. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability status. Confirm that the DFN1006B-3 footprint matches the target PCB layout requirements. Ensure compliance with RoHS directives as specified in the product data sheet before finalizing procurement orders.
Select this component when space constraints require a leadless package with a height under 0.4 mm. It serves as a direct alternative to discrete resistor-transistor networks, reducing pick-and-place costs. Verify that the 2.2 kΩ input resistance aligns with the driving source capabilities for the intended digital switching application.
This part belongs to the PDTC123 series of NPN resistor-equipped transistors manufactured by Nexperia. It is the complement to the PDTA123EMB PNP variant. The series is designed for cost-effective digital switching solutions in compact electronic devices, leveraging integrated biasing to streamline assembly processes.
PDTC123EM,315: Same electrical specifications but utilizes the larger DFN1006 (SOT883) package instead of the smaller DFN1006B-3.