PDTC123EMB,315

PDTC123EMB,315

$0.03
  • Description:TRANS PREBIAS
  • Series:*

SKU:c46110bb77be Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS
  • Series:*
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Resistors Included:-
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:-
  • Power - Max:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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PDTC123EMB,315

Overview

The PDTC123EMB,315 is an NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package with dimensions of 1.0 x 0.6 x 0.37 mm. It features built-in bias resistors R1 and R2, both typically 2.2 kΩ at 25 °C, with a ratio range of 0.8 to 1.2. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at ambient temperatures up to 25 °C, with a junction temperature limit of 150 °C. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count
  • Features a leadless ultra-small SMD plastic package with low profile height
  • Qualified according to the AEC-Q101 standard for automotive use

Applications

  • Low-current peripheral driver
  • Control of IC inputs
  • Replacement for general-purpose transistors in digital applications
  • Mobile applications

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability status. Confirm that the DFN1006B-3 footprint matches the target PCB layout requirements. Ensure compliance with RoHS directives as specified in the product data sheet before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a leadless package with a height under 0.4 mm. It serves as a direct alternative to discrete resistor-transistor networks, reducing pick-and-place costs. Verify that the 2.2 kΩ input resistance aligns with the driving source capabilities for the intended digital switching application.

Part Context

This part belongs to the PDTC123 series of NPN resistor-equipped transistors manufactured by Nexperia. It is the complement to the PDTA123EMB PNP variant. The series is designed for cost-effective digital switching solutions in compact electronic devices, leveraging integrated biasing to streamline assembly processes.

Replacement Considerations

PDTC123EM,315: Same electrical specifications but utilizes the larger DFN1006 (SOT883) package instead of the smaller DFN1006B-3.

PDTC123EMB,315PDTC123EMB,315
$0.03
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