PDTC123ES,126

Overview

The PDTC123ES,126 is an NPN resistor-equipped transistor from the PDTC123E series manufactured by NXP Semiconductors. It integrates two bias resistors with nominal values of R1 = 2.2 kΩ and R2 = 2.2 kΩ into a single component. The device is housed in a SOT54 (TO-92) plastic single-ended leaded package. Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V, a DC output current (IO) of 100 mA, and a total power dissipation of 500 mW at 25 °C ambient temperature. The junction-to-ambient thermal resistance is 250 K/W.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design
• Reduces overall component count on printed circuit boards
• Facilitates automated assembly through reduced pick and place costs

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product database to confirm availability and manufacturing origin. Ensure the selected package variant matches the required PCB footprint and mounting style for the target application design.

Selection Notes

Select this component when space constraints allow for a TO-92 package but integrated biasing is required. Confirm that the 2.2 kΩ internal resistor values align with the desired base drive characteristics and input impedance requirements of the specific circuit topology.

Part Context

This part belongs to the PDTC123E series of NPN resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and SOT883, all sharing similar electrical characteristics but differing in physical form factor and pin configuration.

Replacement Considerations

The PDTA123ES is the PNP complement within the same series. Verify pinout compatibility if substituting across polarity types, as the pin assignments may differ between packages.