PDTC123ET,215

Overview

The PDTC123ET,215 is an NPN resistor-equipped transistor (RET) from the PDTC123E series manufactured by Nexperia. It integrates a single NPN transistor with built-in bias resistors R1 and R2, both specified at 2.2 kΩ. The device is housed in a SOT23 surface-mounted plastic package. Key electrical limits include a collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 100 mA. The total power dissipation is rated at 250 mW at an ambient temperature of 25 °C. The component operates within an ambient temperature range of -65 °C to +150 °C.

Feature Summary

• Integrates bias resistors directly onto the chip to simplify circuit design and reduce component count.
• Provides a compact solution for general-purpose switching and amplification applications.
• Designed to facilitate reduced pick-and-place costs through integrated functionality.

Applications

• General purpose switching
• Amplification circuits
• Inverter and interface circuits
• Circuit driver applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm manufacturing origin and compliance status. Ensure that the selected variant matches the required package type and marking code for your assembly process. Cross-reference the latest datasheet revision to confirm active production status and any updates to absolute maximum ratings or thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The 2.2 kΩ internal resistors are suitable for standard logic interface levels. Consider the 100 mA current limit and 50 V voltage rating to ensure adequate headroom for the target application. Verify thermal management requirements based on the 250 mW power dissipation limit in the SOT23 package.

Part Context

This part belongs to the PDTC123E series of NPN resistor-equipped transistors. The 'ET' suffix denotes the SOT23 package variant. The PNP complement for this series is the PDTA123ET. The series is designed to replace discrete resistor-transistor networks, offering space savings on printed circuit boards while maintaining consistent biasing characteristics across production batches.

Replacement Considerations

The official PNP complement is PDTA123ET. Other RETs with similar voltage and current ratings may be considered if pin compatibility and resistor values align with the existing design constraints.