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The PDTC123EU,115 is an NPN resistor-equipped transistor (RET) manufactured by Nexperia. It integrates a single NPN transistor with built-in bias resistors R1 and R2, both nominally 2.2 kΩ, into a compact SOT323 (SC-70) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous DC output current of 100 mA. Total power dissipation in the SOT323 package is rated at 200 mW at 25 °C ambient temperature. The junction temperature limit is 150 °C, and the thermal resistance from junction to ambient is 625 K/W.
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and compliance status. Confirm that the SOT323 package dimensions align with the target PCB footprint requirements. Ensure the selected distributor provides traceable product data sheets for quality assurance purposes.
Select this component when a compact NPN digital transistor solution is required for space-constrained designs. The fixed 2.2 kΩ input resistor ratio simplifies base drive calculations compared to discrete resistor networks. Verify that the 200 mW power dissipation rating meets the thermal requirements of the intended operating environment.
This part belongs to the PDTC123E series of NPN resistor-equipped transistors. The series includes variants in different packages such as SOT23, SOT883, and TO-92. The EU suffix specifically denotes the SOT323 plastic surface-mounted package configuration.
The PDTA123EU is the PNP complement within the same series. Other package variants like PDTC123ET (SOT23) offer similar electrical characteristics but require different footprints.