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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：DFN1006-3
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Overview
The PDTC123JM,315 is an NPN digital transistor manufactured by Nexperia USA Inc. It features a built-in base resistor (R1) of 2.2 kOhms and is housed in a DFN1006B-3 package (SOT883B/XQFN3). The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 30 at 20 mA and 5 V, a saturation voltage (Vce sat) of 150 mV at 500 µA base current and 10 mA collector current, and a transition frequency (fT) of 230 MHz. Maximum power dissipation is rated at 250 mW.
Feature Summary
- Integrated base resistor eliminates external biasing components to reduce circuit board space.
- DFN1006B-3 leadless package design enables high-density surface-mount assembly.
- Automotive-grade qualification ensures reliability for demanding operational environments.
Applications
- General-purpose switching applications
- Driver circuits for low-power loads
- Logic level translation interfaces
Procurement Notes
Verify the specific suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q100 automotive qualification requirements with the manufacturer or authorized distributor prior to finalizing procurement orders.
Selection Notes
Select this component when a compact NPN digital transistor with a 2.2 kOhm internal base resistor is required. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit load. Verify that the DFN1006B-3 footprint matches the PCB layout constraints.
Part Context
This part belongs to the Nexperia PDTC123 series of Resistor-Equipped Transistors (RETs). The series offers various configurations with different internal resistor values and package options, such as SOT-23 and DFN variants, providing standardized solutions for replacing discrete resistor-transistor networks.
Replacement Considerations
PDTC123TMB,315: Same electrical characteristics but utilizes a DFN1006B-3 package.
FAQ
What is the value of the integrated base resistor?
The integrated base resistor (R1) has a nominal value of 2.2 kOhms.
Is this component qualified for automotive applications?
Yes, the PDTC123JM,315 is AEC-Q100 qualified for automotive grade reliability.
What is the maximum power dissipation rating?
The maximum power dissipation is specified as 250 mW.
