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Product Detailed Parameters
- Description：TRANS PREBIAS
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTC123JQAZ is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1010D-3 (SOT1215) plastic package with visible and solderable side pads. It integrates built-in bias resistors R1 (2.2 kΩ nominal) and R2 (47 kΩ nominal). Key electrical parameters include a collector-emitter voltage of 50 V, output current of 100 mA, DC current gain of 100 at 10 mA, and transition frequency of 230 MHz. The device operates from -55 °C to +150 °C ambient temperature and features AEC-Q101 qualification for automotive reliability.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count
- Leadless ultra-small DFN1010D-3 package with solderable side pads for improved thermal performance and Automatic Optical Inspection compatibility
- AEC-Q101 qualified for automotive applications
Applications
- Digital switching loads
- Controlling IC inputs
- Cost-saving alternative for BC847/BC857 series in digital applications
Procurement Notes
Verify the specific suffix QAZ against the manufacturer's official ordering information to confirm packaging details and availability status. Confirm that the DFN1010D-3 footprint matches the target PCB design requirements. Ensure compliance with RoHS directives as specified in the product data sheet before finalizing procurement orders.
Selection Notes
Select this NPN RET when a low-profile, thermally enhanced package is required for high-density designs. The integrated 2.2 kΩ base resistor and 47 kΩ emitter resistor provide a fixed bias ratio suitable for standard logic interfacing. Consider the 50 V collector-emitter rating and 100 mA current capability for load switching tasks where discrete transistor and resistor combinations would otherwise be needed.
Part Context
This component belongs to the Nexperia PDTC143X/123J/143Z/114YQA series of 50 V, 100 mA NPN resistor-equipped transistors. All members of this family share the same DFN1010D-3 (SOT1215) package and general electrical characteristics, differing primarily in their internal bias resistor values and ratios to suit various drive conditions.
Replacement Considerations
The PNP complement is PDTA123JQAZ. For legacy replacements, consider BC847 series transistors paired with external bias resistors, though this will increase board space and assembly costs.
