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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230 MHz
- Power - Max：340 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTC123JQB-QZ is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks. It integrates bias resistors R1 (typical 2.2 kΩ) and R2 (typical 47 kΩ), yielding a typical resistor ratio of 21. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current (IO) of 100 mA, and DC current gain (hFE) minimum of 100 at VCE=5 V, IC=10 mA. The device features a transition frequency (fT) of 230 MHz and operates within a junction temperature range up to 150 °C.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- AEC-Q101 qualified for automotive applications
- Ultra-thin package height of 0.5 mm suitable for space-constrained designs
- Side-wettable flanks facilitate Automatic Optical Inspection (AOI)
Applications
- Digital logic applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel configuration or packaging variant. Confirm that the AEC-Q101 qualification status aligns with your automotive reliability requirements. Ensure the DFN1110D-3 footprint dimensions are compatible with your PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this RET when a compact NPN switching solution with integrated base and pull-down resistors is required. The PDTC123JQB-Q offers a 2.2 kΩ input resistor and 47 kΩ emitter resistor, providing a specific bias ratio distinct from other series members like the PDTC143XQB-Q. Consider its low profile and thermal characteristics for high-density board designs.
Part Context
This component belongs to the PDTC143X/123J/143Z/114Y/124XQB-Q series of NPN resistor-equipped transistors. All members share the same DFN1110D-3 package and general electrical limits but differ in internal resistor values. The PDTC123JQB-Q is specifically characterized by its 2.2 kΩ / 47 kΩ resistor combination.
Replacement Considerations
The PDTA123JQB-Q is the PNP complement within the same series. Direct pin-to-pin replacement with other RET families requires verification of resistor ratios and hFE specifications against the original design requirements.
