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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230 MHz
- Power - Max：360 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1412D-3
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Overview
The PDTC123JQCZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a DFN1412D-3 (SOT8009) leadless package with side-wettable flanks. It features built-in bias resistors R1 of 2.2 kΩ and R2 of 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Key electrical characteristics include a DC current gain (hFE) of 100 at IC = 10 mA, a collector-emitter saturation voltage (VCEsat) of 100 mV at IC = 5 mA, and a transition frequency (fT) of 230 MHz. Total power dissipation reaches 360 mW on a standard FR4 PCB.
Feature Summary
- Integrates bias resistors to simplify circuit design and reduce component count
- Ultra-small DFN1412D-3 package with side-wettable flanks for improved solder joint inspection
- Low profile height of 0.5 mm suitable for space-constrained applications
Applications
- Digital switching applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the DFN1412D-3 package variant matches the required footprint dimensions and thermal management specifications for the target printed-circuit-board design before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN switch with integrated base biasing is required. The 2.2 kΩ input resistor provides appropriate drive characteristics for standard logic levels. Ensure the application operates within the 50 V collector-emitter voltage limit and does not exceed the 100 mA output current rating under all expected load conditions.
Part Context
This part belongs to the PDTC143X/123J/143Z/114Y/124XQC series, which shares the same SOT8009 package but varies in internal resistor values. It serves as the NPN complement to the PDTA123JQC PNP device. The series is designed to replace discrete transistor-resistor combinations in digital logic circuits.
Replacement Considerations
Direct functional substitutes within the same package include other members of the PDTC143X/123J/143Z/114Y/124XQC series, such as PDTC143XQC or PDTC143ZQC, provided their specific resistor ratios align with the circuit requirements.
