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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123JT-QR is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a SOT23 surface-mount package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current capability of 100 mA, and a total power dissipation of 250 mW at 25 °C. The internal bias resistor R1 has a nominal value of 2.2 kΩ, with R2 nominally set to 47 kΩ. The device operates within a temperature range of -65 °C to +150 °C and is qualified according to AEC-Q101 for automotive applications.
Feature Summary
- Integrated bias resistors simplify circuit design and reduce assembly costs
- Qualified according to AEC-Q101 for automotive use
- High breakdown voltage with 100 mA output current capability
Applications
- Digital applications in automotive and industrial segments
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific suffix 'QR' against the official datasheet to confirm packaging details such as reel size or tape width. Confirm that the ordering code matches the exact resistance values and package dimensions specified in the product data sheet before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN transistor with built-in biasing is required for digital switching or input control. Ensure the 50 V collector-emitter voltage rating meets the system requirements. Verify that the SOT23 package footprint aligns with the PCB layout constraints and thermal management needs.
Part Context
This part belongs to the Nexperia PDTC series of NPN resistor-equipped transistors. It serves as a cost-saving alternative to discrete resistor networks combined with standard transistors. The PNP complement for this device is the PDTA123JT, which shares similar characteristics but utilizes a PNP transistor structure.
Replacement Considerations
The PDTA123JT is the PNP complement. For direct replacement, verify pinout compatibility and ensure the replacement device meets the same voltage, current, and thermal specifications defined in the original datasheet.
FAQ
What are the nominal values of the built-in resistors?
The nominal value for the input bias resistor R1 is 2.2 kΩ, and the ratio R2/R1 is typically 21.
Is this component suitable for automotive applications?
Yes, the PDTC123JT-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) with an open base is 50 V.
