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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123JT-QVL is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in a SOT23 surface-mount package. It integrates bias resistors R1 (2.2 kΩ) and R2 (47 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous output current (IO) of 100 mA, and total power dissipation (Ptot) of 250 mW at 25 °C. The device operates within an ambient temperature range of -65 °C to +150 °C and features a junction-to-ambient thermal resistance of 500 K/W.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Built-in bias resistors simplify circuit design
- Reduces component count and pick-and-place costs
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC847-Q series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure compliance with AEC-Q101 requirements if deploying in automotive environments. Confirm that the selected variant matches the required SOT23 footprint and pinout configuration before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The built-in resistors eliminate external components, reducing board space and assembly complexity. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with the target application's load requirements and operating conditions.
Part Context
This part belongs to the PDTC123JT-Q family of NPN resistor-equipped transistors from Nexperia. It serves as the NPN counterpart to the PDTA123JT PNP RET. The product line is designed to replace discrete transistor-resistor networks, offering a standardized solution for digital logic interfacing and load control in space-constrained designs.
Replacement Considerations
The PDTA123JT is the PNP complement within the same family. For direct functional substitution in complementary circuits, verify polarity requirements. No other specific cross-model replacements are documented in the provided datasheet.
