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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123JT is an NPN Resistor-Equipped Transistor (RET) housed in a small SOT23 surface-mounted device plastic package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage of 50 V, an output current capability of 100 mA, and a total power dissipation of 250 mW at 25 °C. The built-in input bias resistor R1 has a typical value of 2.2 kΩ, while the emitter-base resistor R2 is typically 47 kΩ, resulting in a bias resistor ratio of approximately 21.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design
- Reduces overall component count in digital applications
- Minimizes pick and place costs during manufacturing
Applications
- Digital applications in industrial segments
- Cost-saving alternative for BC847 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the non-automotive qualified status aligns with the target application environment. Ensure the SOT23 footprint dimensions are compatible with the intended PCB layout. Cross-reference the marking code %25 with the manufacturing site requirements for traceability purposes.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The SOT23 package offers a small form factor suitable for space-constrained designs. Consider the 50 V collector-emitter voltage rating to ensure adequate headroom for the operating conditions. Evaluate the thermal resistance characteristics if high ambient temperatures or elevated power dissipation scenarios are anticipated.
Part Context
This part belongs to the Nexperia Resistor-Equipped Transistor family, designed to replace discrete transistor and resistor combinations. It serves as the NPN complement to the PDTA123JT PNP variant. The product data sheet revision history indicates a transition from a family document to a single type specification, reflecting updated identity guidelines and the removal of automotive qualification status for this specific part number.
Replacement Considerations
The PDTA123JT is the documented PNP complement within the same package and feature set. For direct functional substitution in complementary circuits, verify polarity requirements. No other specific substitute part numbers are explicitly confirmed in the provided documentation.
