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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123JT,235 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mounted package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage of 50 V, an output current capability of 100 mA, and a typical DC current gain of 100 at 10 mA. The built-in input resistor R1 has a nominal value of 2.2 kΩ with a ratio to the second resistor R2 of 21. The device operates within a junction temperature range of -65 °C to 150 °C and features a transition frequency of 230 MHz.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count
- Provides 100 mA output current capability for switching applications
- High breakdown voltage suitable for digital logic interfacing
Applications
- Digital applications in industrial segments
- Cost-saving alternative for BC847 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as tape and reel specifications or cut tape availability. Confirm that the product status aligns with production requirements, as datasheet revisions may impact long-term supply chain planning. Ensure compliance with RoHS directives if required by the target application environment.
Selection Notes
Select this component when a compact NPN transistor with integrated base biasing is required for space-constrained designs. The SOT23 package offers a small footprint suitable for high-density PCB layouts. Consider the 50 V collector-emitter voltage rating and 100 mA current limit to ensure adequate headroom for the intended load switching or signal control tasks.
Part Context
The PDTC123JT belongs to the NPN Resistor-Equipped Transistor family from Nexperia. Its PNP complement is the PDTA123JT. This component is designed as a cost-effective solution for replacing discrete resistor-transistor networks in digital logic circuits, offering simplified assembly and reduced board space compared to traditional discrete implementations.
Replacement Considerations
The PDTA123JT serves as the PNP complement within the same family. For direct functional substitution in complementary configurations, verify pinout compatibility and thermal characteristics. No other specific cross-model substitutes are documented in the provided source material.
