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The PDTC123JU-QX is an NPN Resistor-Equipped Transistor (RET) in a SOT323 (SC-70) package. It features built-in bias resistors with R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current (IO) of 100 mA, and total power dissipation (Ptot) of 200 mW at 25 °C. The device operates between -65 °C and +150 °C. It has a DC current gain (hFE) minimum of 100 at IC = 10 mA and a transition frequency (fT) typical value of 230 MHz.
Verify the specific suffix 'QX' against the official Nexperia datasheet for the PDTC123JU-Q series to confirm packaging details such as reel size or tape specifications. Ensure the ordering code matches the required automotive qualification standards and package dimensions before finalizing procurement orders.
Select this component when a compact NPN transistor with integrated base biasing is required for space-constrained designs. The SOT323 package offers a small footprint suitable for surface-mount assembly. Consider the 50 V rating and 100 mA current limit to ensure compatibility with the target load requirements.
This part belongs to the Nexperia PDTC123JU-Q family of resistor-equipped transistors. It serves as the NPN complement to the PDTA123JU PNP variant. The product line is designed to replace discrete resistor-transistor combinations, offering cost savings and simplified pick-and-place manufacturing processes.
The PDTA123JU is the PNP complement within the same family. For direct replacement, verify that the alternative component meets the same AEC-Q101 automotive qualification and maintains identical pinout configuration and thermal characteristics.
The input bias resistor (R1) is 2.2 kΩ, and the feedback resistor (R2) is 47 kΩ.
Yes, the PDTC123JU-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum collector-emitter voltage (VCEO) is 50 V.