PDTC123JU,115

Overview

The PDTC123JU is an NPN Resistor-Equipped Transistor (RET) housed in a SC-70 (SOT323) plastic surface-mounted package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current (IO) capability of 100 mA, and a total power dissipation (Ptot) of 200 mW at 25 °C. The built-in input bias resistor (R1) has a typical value of 2.2 kΩ with a range of 1.54 to 2.86 kΩ. The internal resistor ratio (R2/R1) typically measures 21, ranging from 17 to 26. The device features a transition frequency (fT) of 230 MHz and operates within a junction temperature range of -65 °C to 150 °C.

Feature Summary

• Integrates built-in bias resistors to eliminate external components
• Provides high breakdown voltage for robust operation
• Reduces pick and place costs through compact SMD packaging

Applications

• Digital applications in industrial segments
• Cost-saving alternative for BC847 series in digital applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and marking codes. Confirm that the non-automotive qualification status aligns with the target application requirements, as this product lacks AEC-Q101 certification. Cross-reference the SC-70 footprint dimensions with PCB layout guidelines before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required for industrial or general-purpose digital circuits. Ensure the 50 V collector-emitter voltage rating exceeds the maximum operating voltage. Verify that the 100 mA output current capacity meets the load requirements. Consider the thermal resistance characteristics if the device will operate in enclosed environments or at elevated ambient temperatures.

Part Context

This part belongs to Nexperia's family of Resistor-Equipped Transistors designed to replace discrete transistor and resistor combinations. It serves as the NPN complement to the PDTA123JU PNP variant. The device replaces two separate components on the PCB, offering space savings and simplified assembly processes compared to traditional discrete designs.

Replacement Considerations

Direct functional substitutes include the PDTA123JU for PNP applications. For equivalent NPN performance in the same package, verify compatibility with other RET families such as the PDTC123TU, noting differences in internal resistor configurations.