PDTC123TE,115

Overview

The PDTC123TE,115 is an NPN Resistor-Equipped Transistor (RET) from the PDTC123T series, manufactured by Nexperia. It integrates a single NPN transistor with a built-in bias resistor R1 of 2.2 kΩ and an open R2 configuration. The device operates in a SOT416 (SC-75) plastic surface-mounted package with three leads. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous output current (IO) of 100 mA, and a peak DC collector current of 100 mA. The total power dissipation is rated at 150 mW at an ambient temperature of 25 °C, with a junction temperature limit of 150 °C.

Feature Summary

• Integrates a single NPN transistor with a built-in input bias resistor to reduce component count and simplify circuit design.
• Provides high breakdown voltage capability suitable for digital switching applications.
• Offers cost-saving advantages as an alternative to discrete BC847 series transistors in digital logic circuits.

Applications

• Digital applications requiring general-purpose switching
• Cost-saving alternative for BC847 series in digital applications
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and regional manufacturing origins. Ensure compatibility with the SOT416 footprint during PCB layout. Confirm that the selected distributor sources directly from authorized channels to guarantee authenticity and traceability of the semiconductor components.

Selection Notes

Select this component when a compact NPN solution with integrated base biasing is required for space-constrained designs. The SOT416 package offers a small form factor compared to through-hole alternatives. Consider the 150 mW power dissipation limit and thermal resistance characteristics when designing for high ambient temperatures or dense board layouts.

Part Context

This part belongs to the PDTC123T series of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTA123TE PNP variant. The series includes multiple package options such as SOT23, SOT323, and SOT883, allowing designers to choose the most suitable physical footprint while maintaining consistent electrical performance across the family.

Replacement Considerations

Direct functional equivalents within the same series include the PDTA123TE (PNP complement). Other package variants like PDTC123TT (SOT23) or PDTC123TU (SOT323) offer identical electrical specifications but require different footprints. Cross-reference with BC847 series discrete transistors if external biasing resistors are acceptable.