SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTC123TM,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a single base resistor (R1) of 2.2 kOhms within a compact DFN1006B-3 package. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a transition frequency of 230 MHz, a maximum power dissipation of 250 mW, and a minimum DC current gain (hFE) of 30 at 20 mA and 5 V. The saturation voltage is specified as 150 mV at 500 µA base current and 10 mA collector current.
Verify the specific suffix '315' corresponds to the required tape and reel packaging configuration. Confirm RoHS compliance status and AEC-Q100 automotive qualification requirements against the latest official datasheet before finalizing procurement specifications.
Select this component when a single integrated base resistor is sufficient for biasing. Compare with variants containing dual resistors if pull-down functionality is required. Ensure the DFN1006B-3 footprint matches the target PCB layout constraints.
This part belongs to the PDTC123 family of NPN resistor-equipped transistors. It serves as the complement to the PNP PDTA123 series. The TM suffix indicates the specific DFN1006B-3 leadless package variant within the broader product line.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance parameters before considering any generic equivalents.